Kawai h 2008 phd thesis mit
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Browsing Theses - Dept. of Physics by Title
Massachusetts Institute of Technology. Line edge roughness LER on the sidewalls of gate electrodes in metal oxide semiconductor transistors is one of the most important issues in the /phd-research-proposal-sample-law.html of modem integrated circuits IC.
The significance of LER kawai h 2008 phd thesis mit tremendously as desired features miniaturize because the dimensions of the edge roughness become comparable to those of the features.
A fundamental understanding of the origins of the surface roughness and LER formation during plasma etching process is thus necessary to optimize the IC manufacturing process and prevent device failure.
DSpace@MIT: Browsing Theses - Physics by Title
To meet this challenge, a 3-D Monte Carlo simulator was developed to model the roughening of a surface as well as follow the macroscopic evolution link its profile during plasma etching. The simulator employs a cellular representation of the surface with Monte Carlo modeling of the mass transport and reaction kinetics.
The go here geometric properties kawai h 2008 phd thesis mit surface features were computed by mit to a polynomial surface, which allowed for a more accurate description of kawai h 2008 phd thesis mit surface normal and local curvature. Mit numerical algorithm for simulating etching and deposition was validated by comparing with the please click for source advancement of a surface for the case of isotropic and anisotropic etching.
The simulator was used to explore surface roughening during the physical sputtering of kawai h 2008 phd thesis mit blanket silicon surface by argon ion bombardment.
The results showed that there is a significant change in its morphology with different off-normal angles of incidence.
DSpace@MIT: Browsing Theses - Dept. of Physics by Title
When the surface is etched at normal incidence, the surface becomes roughened with no kawai 2008 orientation. When etched kawai h 2008 phd thesis mit an kawai h 2008 phd thesis mit ion incidence belowthe surface develops ripples that are phd thesis perpendicular to mit ion beam direction. For off-normal phd thesis between andthe surface remains smooth independent of the etch time. The surface is go here roughened for angles of incidence aboveforming patterns continue reading are aligned with the ion beam direction.
These trends match qualitatively with those observed in experimental measurements. The simulation results further showed that these transitions of surface morphology with increasing off-normal angles of ion incidence are related to the angular dependence of the etching yield.
Browsing Theses - Physics by Title
Kawai h 2008 phd thesis mit effects of other factors, including the angular distribution of scattered ions, the non-uniformity of the film density, the initial roughness of the surface and the re-deposition of sputtered materials were also investigated using our simulator. The roughening kawai h 2008 phd thesis mit the sidewalls of patterned polysilicon etched with Cl2 was also explored via simulation.
The simulation results showed that the primary cause of sidewall roughness is kawai 2008 to the transfer read more roughness on the photoresist and anti-reflective coating ARC sidewall to the underlying polysilicon sidewall during etching.
The root-mean-square RMS roughness of the mit due to the features that result from the etching is highest at the photoresist layer and decreases kawai 2008 depth. This trend is consistent with experimental observations. The simulation also showed that the re-deposition of sputtered photoresist particles onto the sidewalls during etching enhances phd thesis mit roughening.
3-dimensional modeling and simulation of surface and sidewall roughening during plasma etching
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Сказать вам, что это вот внезапное исправление его характера может вдруг обернуться чем-то постоянным. Но они увидели достаточно, что абсолютно вся система - рукотворная.
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